Anomalous Transport Properties of Carbon-Doped EuB6
نویسندگان
چکیده
منابع مشابه
Iv. Transportelectronic Structure of Eub6, Transport and Magnetic Properties
In non-magnetic RB,, it is shown that the most common defect R vacancy can trap third hole creating a compensating conduction electron due to the narrow gap semiconductor character. The latter is trapped loosely and thus easily causes n-type character. Various transport properties are explained on this model. In magnetic EuB,-, the above defect center makes a giant moment cluster. Furthermore, ...
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Single crystals of the magnetic semiconducting compound EuB6 have been prepared using the Al flux technique. Resistivity, Hall effect and magnetoresistance measurements have been performed in the 4.2 300 K range, under hydrostatic pressure up to 7 kbar. The resistivity peak occuring at Tp, correlated to the ferromagnetic ordering temperature is shifted by dTp/dP=+0.3 K/kbar when pressure is app...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2010
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.118.893